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RIE machine

RIE(Reactive dry etching) 용도
  • Etch materials : SiO2, Si3N4, PI, etc
RIE 장점
  • Uniform etch ( < 5% @ 6” wafer)
  • Die to wafer compatible
  • Very clean Surface
Specification
  • Type : RIE, ICP RIE
  • Electrode : 150mm ( Optional 200mm)
  • RF power : 300W ( Optional 600W)
  • Automatching network
  • Vacuum and pressure gauge
  • 2 CH MFC ( Available to upgrade up to 4 ch)
  • Process gases : CF4, O2, SF6, etc
  • Vacuum pump : Oil rotary pump(Optional Turbo pump and related stuff)
  • PLC based Software(Optional PC Based)
  • Recirculating Chiller( 0~80 degree)
Examples
  • Before etch
  • After etch
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